FGA6065ADF
Manufacturer:
On Semiconductor
Mfr.Part #:
FGA6065ADF
Datasheet:
Description:
IGBTs TO-3P Through Hole Single 2.3 V 306 W 120 A
| Parameter | Value |
|---|---|
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Tube |
| RoHS | Compliant |
| Type | Trench Field Stop |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 306 W |
| Power Dissipation | 306 W |
| Max Collector Current | 120 A |
| Collector Emitter Breakdown Voltage | 650 V |
| Reverse Recovery Time | 110 ns |
| Continuous Collector Current | 120 A |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 2.3 V |
| Collector Emitter Saturation Voltage | 1.8 V |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Maximum Gate Emitter Voltage | 20 V |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||